APT15GN120KG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

JEDEC-95 Code :

TO-220AB

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 15A

Gate Charge :

90nC

Gate-Emitter Voltage-Max :

30V

Turn Off Time-Nom (toff) :

355 ns

Series :

POWER MOS 7®

Operating Temperature :

-55°C~150°C TJ

Switching Energy :

410μJ (on), 950μJ (off)

Pbfree Code :

yes

Number of Terminations :

3

Terminal Finish :

PURE MATTE TIN

Collector Emitter Voltage (VCEO) :

1.2kV

Turn On Time :

19 ns

Voltage - Collector Emitter Breakdown (Max) :

1200V

Td (on/off) @ 25°C :

10ns/150ns

Packaging :

Tube

RoHS Status :

RoHS Compliant

Pin Count :

3

Lead Free :

Lead Free

Voltage - Rated DC :

1.2kV

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Number of Elements :

1

Mounting Type :

Through Hole

Element Configuration :

Single

Test Condition :

800V, 15A, 4.3 Ω, 15V

Current Rating :

45A

Radiation Hardening :

No

Max Collector Current :

45A

Max Power Dissipation :

195W

Input Type :

Standard

Collector Emitter Breakdown Voltage :

1.2kV

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

IGBT Type :

Trench Field Stop

Transistor Application :

POWER CONTROL

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

Gate-Emitter Thr Voltage-Max :

6.5V

JESD-30 Code :

R-PSFM-T3

Mount :

Through Hole