APT15GN120KG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Test Condition :

800V, 15A, 4.3 Ω, 15V

Number of Terminations :

3

Mounting Type :

Through Hole

JESD-609 Code :

e3

Pbfree Code :

yes

Voltage - Rated DC :

1.2kV

Element Configuration :

Single

Radiation Hardening :

No

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

Max Power Dissipation :

195W

Number of Elements :

1

IGBT Type :

Trench Field Stop

Td (on/off) @ 25°C :

10ns/150ns

Published :

2004

Collector Emitter Breakdown Voltage :

1.2kV

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 15A

Gate-Emitter Thr Voltage-Max :

6.5V

Collector Emitter Voltage (VCEO) :

1.2kV

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mount :

Through Hole

Switching Energy :

410μJ (on), 950μJ (off)

Input Type :

Standard

Package / Case :

TO-220-3

Terminal Finish :

PURE MATTE TIN

RoHS Status :

RoHS Compliant

Gate Charge :

90nC

Transistor Application :

POWER CONTROL

Max Collector Current :

45A

Gate-Emitter Voltage-Max :

30V

Operating Temperature :

-55°C~150°C TJ

Series :

POWER MOS 7®

Turn Off Time-Nom (toff) :

355 ns

Current Rating :

45A

Voltage - Collector Emitter Breakdown (Max) :

1200V

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Turn On Time :

19 ns

Lead Free :

Lead Free