APT1001RBN

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Pbfree Code :

No

Number of Terminations :

3

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 1mA

Rds On (Max) @ Id, Vgs :

1 Ω @ 5.5A, 10V

Power Dissipation :

310W

Continuous Drain Current (ID) :

11A

Packaging :

Tube

Package / Case :

TO-247-3

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

44A

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

1000V

JESD-30 Code :

R-PSFM-T3

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

1Ohm

Power Dissipation-Max :

310W Tc

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-247AD

Current - Continuous Drain (Id) @ 25°C :

11A Tc

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Mounting Type :

Through Hole

Series :

POWER MOS IV®

Gate to Source Voltage (Vgs) :

30V