APT1001RSVRG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3660 pF @ 25 V

Series :

POWER MOS V®

Base Product Number :

APT1001

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

1 Ω

Technology :

MOSFET (Metal Oxide)

Terminal Position :

Single

Package :

Tube

Avalanche Energy Rating (Eas) :

1210 mJ

Gate Charge (Qg) (Max) @ Vgs :

225 nC @ 10 V

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Active

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1Ohm @ 500mA, 10V

Number of Elements :

1

Pbfree Code :

yes

Reach Compliance Code :

Compliant

Current - Continuous Drain (Id) @ 25°C :

11A (Tc)

JESD-609 Code :

e3

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

1000 V

Pulsed Drain Current-Max (IDM) :

44 A

FET Type :

N-Channel

Number of Terminals :

2

Terminal Finish :

PURE MATTE TIN

FET Feature :

-

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 1mA

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

245

Supplier Device Package :

D3 [S]

Pin Count :

3

Package Shape :

RECTANGULAR

Surface Mount :

yes

DS Breakdown Voltage-Min :

1000 V

Transistor Application :

SWITCHING