APT1001RSVRG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

1000 V

Supplier Device Package :

D3 [S]

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Terminal Finish :

PURE MATTE TIN

Series :

POWER MOS V®

Terminal Position :

Single

Product Status :

Active

Polarity/Channel Type :

N-Channel

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

1210 mJ

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

Pulsed Drain Current-Max (IDM) :

44 A

Peak Reflow Temperature (Cel) :

245

Base Product Number :

APT1001

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

11A (Tc)

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

1 Ω

Package :

Tube

Rds On (Max) @ Id, Vgs :

1Ohm @ 500mA, 10V

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Feature :

-

Number of Terminals :

2

Technology :

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) :

1000 V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

3660 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs :

225 nC @ 10 V

Surface Mount :

yes

FET Type :

N-Channel

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified