APT13005SU-G1
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- Mfr.Part #
- APT13005SU-G1
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 3.2A TO126
- Stock
- 1,817
- In Stock ：
- 1,817
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 1V
- Collector Emitter Saturation Voltage :
- 1V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Height :
- 11.2mm
- Reach Compliance Code :
- not_compliant
- Transistor Element Material :
- SILICON
- Published :
- 2016
- Factory Lead Time :
- 5 Weeks
- Collector Emitter Breakdown Voltage :
- 450V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 3.2A
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 750mA, 3A
- Max Collector Current :
- 3.2A
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 2A 5V
- Width :
- 2.9mm
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 9V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~150°C TJ
- Mount :
- Through Hole
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 10V
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 4MHz
- Transition Frequency :
- 4MHz
- Element Configuration :
- Single
- Packaging :
- Bulk
- Package / Case :
- TO-225AA, TO-126-3
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Max Power Dissipation :
- 20W
- Length :
- 8.2mm
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Datasheets
- APT13005SU-G1
APT13005SU-G1 Documents
NPN -65°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
APT13005SU-G1 Overview
In this device, the DC current gain is 8 @ 2A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 750mA, 3A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.4MHz is present in the transition frequency.Maximum collector currents can be below 3.2A volts.
APT13005SU-G1 Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 750mA, 3A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
APT13005SU-G1 Applications
There are a lot of Diodes Incorporated
APT13005SU-G1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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