APT13005SU-G1
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- Mfr.Part #
- APT13005SU-G1
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 3.2A TO126
- Stock
- 1,817
- In Stock ：
- 1,817
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Saturation Voltage :
- 1V
- Transition Frequency :
- 4MHz
- Width :
- 2.9mm
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Max Power Dissipation :
- 20W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Collector Current :
- 3.2A
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 2A 5V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Published :
- 2016
- Collector Emitter Breakdown Voltage :
- 450V
- Height :
- 11.2mm
- Collector Emitter Voltage (VCEO) :
- 1V
- Packaging :
- Bulk
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Factory Lead Time :
- 5 Weeks
- Gain Bandwidth Product :
- 4MHz
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Operating Temperature :
- -65°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 9V
- Length :
- 8.2mm
- Reach Compliance Code :
- not_compliant
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 3.2A
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 750mA, 3A
- Contact Plating :
- Tin
- Package / Case :
- TO-225AA, TO-126-3
- Collector Base Voltage (VCBO) :
- 10V
- Mounting Type :
- Through Hole
- Datasheets
- APT13005SU-G1
APT13005SU-G1 Documents
NPN -65°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
APT13005SU-G1 Overview
In this device, the DC current gain is 8 @ 2A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 750mA, 3A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.4MHz is present in the transition frequency.Maximum collector currents can be below 3.2A volts.
APT13005SU-G1 Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 750mA, 3A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
APT13005SU-G1 Applications
There are a lot of Diodes Incorporated
APT13005SU-G1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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