APT13005SU-G1
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- Mfr.Part #
- APT13005SU-G1
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 3.2A TO126
- Stock
- 1,817
- In Stock ：
- 1,817
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 1V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 9V
- Current - Collector (Ic) (Max) :
- 3.2A
- Width :
- 2.9mm
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-225AA, TO-126-3
- Reach Compliance Code :
- not_compliant
- Max Collector Current :
- 3.2A
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Max Power Dissipation :
- 20W
- Element Configuration :
- Single
- Height :
- 11.2mm
- Collector Emitter Saturation Voltage :
- 1V
- Published :
- 2016
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 4MHz
- Transition Frequency :
- 4MHz
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 2A 5V
- Collector Emitter Breakdown Voltage :
- 450V
- Factory Lead Time :
- 5 Weeks
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -65°C~150°C TJ
- Length :
- 8.2mm
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 750mA, 3A
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- APT13005SU-G1
NPN -65°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
APT13005SU-G1 Overview
In this device, the DC current gain is 8 @ 2A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 750mA, 3A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.4MHz is present in the transition frequency.Maximum collector currents can be below 3.2A volts.
APT13005SU-G1 Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 750mA, 3A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
APT13005SU-G1 Applications
There are a lot of Diodes Incorporated
APT13005SU-G1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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