2SD2695,T6F(J
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- Mfr.Part #
- 2SD2695,T6F(J
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A TO92MOD
- Stock
- 5,399
- In Stock ：
- 5,399
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Supplier Device Package :
- TO-92MOD
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Transistor Type :
- NPN
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 1A 2V
- Power - Max :
- 900mW
- Operating Temperature :
- 150°C TJ
- Frequency - Transition :
- 100MHz
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 2A
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Published :
- 2009
- Datasheets
- 2SD2695,T6F(J
NPN 150°C TJ 10μA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SD2695,T6F(J Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 2000 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1mA, 1A.This product comes in a TO-92MOD device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).
2SD2695,T6F(J Features
the DC current gain for this device is 2000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the supplier device package of TO-92MOD
2SD2695,T6F(J Applications
There are a lot of Toshiba Semiconductor and Storage
2SD2695,T6F(J applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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