2SD2654TLV
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- Mfr.Part #
- 2SD2654TLV
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A EMT3
- Stock
- 17,498
- In Stock ：
- 17,498
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 50V
- Published :
- 2004
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Emitter Voltage (VCEO) :
- 50V
- Factory Lead Time :
- 13 Weeks
- Frequency :
- 250MHz
- Transistor Type :
- NPN
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 250MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Element Configuration :
- Single
- Base Part Number :
- 2SD2654
- Current - Collector Cutoff (Max) :
- 300nA ICBO
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Continuous Collector Current :
- 150mA
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-75, SOT-416
- Emitter Base Voltage (VEBO) :
- 12V
- Max Collector Current :
- 150mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 150mA
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 250MHz
- hFE Min :
- 820
- Terminal Position :
- Dual
- JESD-609 Code :
- e1
- Mount :
- Surface Mount
- Contact Plating :
- Copper, Silver, Tin
- Voltage - Rated DC :
- 50V
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 150mW
- Power Dissipation :
- 150mW
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 1mA 5V
- Collector Base Voltage (VCBO) :
- 60V
- Datasheets
- 2SD2654TLV
NPN 150°C TJ 300nA ICBO 1 Elements 3 Terminations SILICON NPN SC-75, SOT-416 Tape & Reel (TR) Surface Mount
2SD2654TLV Overview
In this device, the DC current gain is 820 @ 1mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.Maintaining the continuous collector voltage at 150mA is essential for high efficiency.Keeping the emitter base voltage at 12V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (150mA).250MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 150mA volts.
2SD2654TLV Features
the DC current gain for this device is 820 @ 1mA 5V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 12V
the current rating of this device is 150mA
a transition frequency of 250MHz
2SD2654TLV Applications
There are a lot of ROHM Semiconductor
2SD2654TLV applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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