2SD2653KT146
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- Mfr.Part #
- 2SD2653KT146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 12V 2A SMT3
- Stock
- 78,137
- In Stock ：
- 78,137
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Width :
- 1.6mm
- Transition Frequency :
- 360MHz
- Height :
- 1mm
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 12V
- HTS Code :
- 8541.21.00.75
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Collector Base Voltage (VCBO) :
- 15V
- Max Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Length :
- 2.9mm
- Max Collector Current :
- 2A
- Max Power Dissipation :
- 200mW
- Current Rating :
- 2A
- Number of Terminations :
- 3
- Factory Lead Time :
- 13 Weeks
- RoHS Status :
- ROHS3 Compliant
- Published :
- 1998
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 360MHz
- Terminal Finish :
- TIN SILVER COPPER
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Voltage - Rated DC :
- 12V
- Collector Emitter Breakdown Voltage :
- 12V
- Mounting Type :
- Surface Mount
- hFE Min :
- 270
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 50mA, 1A
- Collector Emitter Saturation Voltage :
- 90mV
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 12V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- 2SD2653
- Pbfree Code :
- yes
- Contact Plating :
- Copper, Silver, Tin
- Continuous Collector Current :
- 2A
- Datasheets
- 2SD2653KT146
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD2653KT146 Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 90mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 180mV @ 50mA, 1A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 360MHz.Input voltage breakdown is available at 12V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SD2653KT146 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 360MHz
2SD2653KT146 Applications
There are a lot of ROHM Semiconductor
2SD2653KT146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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