2SD2390

Manufacturer :

Sanken Electric Co., Ltd.

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation-Max (Abs) :

100W

Collector Current (DC) :

10(A)

Number of Terminations :

3

Additional Feature :

BUILT-IN BIAS RESISTOR

Rad Hardened :

No

Power - Max :

100W

Mounting Type :

Through Hole

Operating Temp Range :

-55C to 150C

Packaging :

Bulk

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 7mA, 7A

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

5000 @ 7A 4V

Transistor Application :

AMPLIFIER

Operating Temperature :

150°C TJ

Collector-Emitter Voltage :

150(V)

Voltage - Collector Emitter Breakdown (Max) :

150V

Package :

Tray

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Polarity :

NPN

Series :

-

Frequency - Transition :

55MHz

Emitter-Base Voltage :

5(V)

Transistor Element Material :

SILICON

Configuration :

DARLINGTON WITH BUILT-IN RESISTOR

Current - Collector (Ic) (Max) :

10A

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Product Status :

Active

Package / Case :

TO-3P-3, SC-65-3

Operating Temperature Classification :

Military

Power Dissipation :

100(W)

Supplier Device Package :

TO-3P

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Factory Lead Time :

24 Weeks

Package Type :

TO-3P

Published :

2001

Mounting :

Through Hole

Surface Mount :

No

Terminal Position :

Single

Pin Count :

3

Number of Pins :

3

Current - Collector Cutoff (Max) :

100μA ICBO

Collector-Base Voltage :

160(V)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Type :

NPN - Darlington

Maximum Collector Cut-off Current :

100

Transition Frequency :

55MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base-Emitter Saturation Voltage (Max) :

3(V)