2SD2257(Q,M)
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- Mfr.Part #
- 2SD2257(Q,M)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TO220NIS
- Stock
- 49,614
- In Stock ：
- 49,614
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-220-3 Full Pack
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 2A 2V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Supplier Device Package :
- TO-220NIS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 3A
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1.5mA, 1.5A
- Published :
- 2007
- Power - Max :
- 2W
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Datasheets
- 2SD2257(Q,M)
NPN 150°C TJ 10μA ICBO TO-220-3 Full Pack Bulk Through Hole
2SD2257(Q,M) Overview
This device has a DC current gain of 2000 @ 2A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-220NIS.Detection of Collector Emitter Breakdown at 100V maximal voltage is present.
2SD2257(Q,M) Features
the DC current gain for this device is 2000 @ 2A 2V
the vce saturation(Max) is 1.5V @ 1.5mA, 1.5A
the supplier device package of TO-220NIS
2SD2257(Q,M) Applications
There are a lot of Toshiba Semiconductor and Storage
2SD2257(Q,M) applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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