2SD2226KT146W
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- Mfr.Part #
- 2SD2226KT146W
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SMT3
- Stock
- 11,195
- In Stock ：
- 11,195
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PDSO-G3
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 1200
- HTS Code :
- 8541.21.00.75
- Factory Lead Time :
- 13 Weeks
- Terminal Finish :
- TIN SILVER COPPER
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 1mA 5V
- Number of Elements :
- 1
- Current Rating :
- 150mA
- Collector Emitter Breakdown Voltage :
- 50V
- Pin Count :
- 3
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 50V
- Width :
- 1.8mm
- Transition Frequency :
- 250MHz
- Number of Pins :
- 59
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Contact Plating :
- Copper, Silver, Tin
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Emitter Saturation Voltage :
- 300mV
- Current - Collector Cutoff (Max) :
- 300nA ICBO
- Emitter Base Voltage (VEBO) :
- 12V
- Continuous Collector Current :
- 150mA
- JESD-609 Code :
- e1
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 50V
- Gain Bandwidth Product :
- 250MHz
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 60V
- Length :
- 3mm
- Max Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Height :
- 1.2mm
- Max Collector Current :
- 150mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- 2SD2226
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Published :
- 2004
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Datasheets
- 2SD2226KT146W
NPN 150°C TJ 300nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD2226KT146W Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 820 @ 1mA 5V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 150mA.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 150mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 150mA volts at its maximum.
2SD2226KT146W Features
the DC current gain for this device is 820 @ 1mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 12V
the current rating of this device is 150mA
a transition frequency of 250MHz
2SD2226KT146W Applications
There are a lot of ROHM Semiconductor
2SD2226KT146W applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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