2SD2170T100
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- Mfr.Part #
- 2SD2170T100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 90V 2A MPT3
- Stock
- 1,537
- In Stock ：
- 1,537
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 2A
- Power Dissipation :
- 500mW
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 4
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-F3
- Continuous Collector Current :
- 2A
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 90V
- Transition Frequency :
- 80MHz
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Polarity :
- NPN
- ECCN Code :
- EAR99
- Terminal Finish :
- TIN COPPER
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Number of Elements :
- 1
- Published :
- 2001
- Pin Count :
- 3
- Contact Plating :
- Copper, Tin
- Package / Case :
- TO-243AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 2V
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 90V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 110V
- Transistor Element Material :
- SILICON
- Additional Feature :
- BUILT-IN BIAS RESISTOR
- Max Collector Current :
- 2A
- Time@Peak Reflow Temperature-Max (s) :
- 10
- JESD-609 Code :
- e2
- Max Breakdown Voltage :
- 90V
- Case Connection :
- COLLECTOR
- hFE Min :
- 1000
- Transistor Type :
- NPN - Darlington
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 2W
- Gain Bandwidth Product :
- 80MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Collector Base Voltage (VCBO) :
- 110V
- Base Part Number :
- 2SD2170
- Datasheets
- 2SD2170T100
NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
2SD2170T100 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 1A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 2A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 80MHz in the part.Single BJT transistor can be broken down at a voltage of 90V volts.When collector current reaches its maximum, it can reach 2A volts.
2SD2170T100 Features
the DC current gain for this device is 1000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 80MHz
2SD2170T100 Applications
There are a lot of ROHM Semiconductor
2SD2170T100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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