2SD2142KT146
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- Mfr.Part #
- 2SD2142KT146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.3A SMT3
- Stock
- 7,260
- In Stock ：
- 7,260
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- hFE Min :
- 5000
- Continuous Collector Current :
- 300mA
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- HTS Code :
- 8541.21.00.75
- JESD-609 Code :
- e1
- Published :
- 2008
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Max Collector Current :
- 300mA
- Emitter Base Voltage (VEBO) :
- 10V
- Number of Terminations :
- 3
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Collector Emitter Breakdown Voltage :
- 30V
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Current Rating :
- 300mA
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 30V
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN - Darlington
- Contact Plating :
- Copper, Silver, Tin
- Voltage - Rated DC :
- 32V
- Polarity :
- NPN
- Transition Frequency :
- 200MHz
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 200mW
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- TIN SILVER COPPER
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- 2SD2142
- Number of Elements :
- 1
- Factory Lead Time :
- 13 Weeks
- Power Dissipation :
- 200mW
- Gain Bandwidth Product :
- 200MHz
- Collector Base Voltage (VCBO) :
- 30V
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- 2SD2142KT146
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD2142KT146 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 300mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 300mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 300mA volts at its maximum.
2SD2142KT146 Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 200MHz
2SD2142KT146 Applications
There are a lot of ROHM Semiconductor
2SD2142KT146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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