2SD2114KT146W
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- Mfr.Part #
- 2SD2114KT146W
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.5A SMT3
- Stock
- 88,247
- In Stock ：
- 88,247
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Published :
- 2004
- JESD-30 Code :
- R-PDSO-G3
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Transition Frequency :
- 350MHz
- HTS Code :
- 8541.21.00.75
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 10mA 3V
- Transistor Element Material :
- SILICON
- Voltage - Collector Emitter Breakdown (Max) :
- 20V
- Base Part Number :
- 2SD2114
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 500mA
- Frequency - Transition :
- 350MHz
- VCEsat-Max :
- 0.4 V
- Number of Terminations :
- 3
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current - Collector (Ic) (Max) :
- 500mA
- Surface Mount :
- yes
- Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max (Abs) :
- 0.3W
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 13 Weeks
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Power - Max :
- 200mW
- Datasheets
- 2SD2114KT146W
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD2114KT146W Overview
In this device, the DC current gain is 820 @ 10mA 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 20mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 350MHz.There is a 20V maximal voltage in the device due to collector-emitter breakdown.
2SD2114KT146W Features
the DC current gain for this device is 820 @ 10mA 3V
the vce saturation(Max) is 400mV @ 20mA, 500mA
a transition frequency of 350MHz
2SD2114KT146W Applications
There are a lot of ROHM Semiconductor
2SD2114KT146W applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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