2SCR554PT100
- Mfr.Part #
- 2SCR554PT100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1.5A MPT3
- Stock
- 2,075
- In Stock :
- 2,075
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 2W
- Terminal Form :
- Flat
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Contact Plating :
- Copper, Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 80V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- TO-243AA
- Terminal Finish :
- TIN COPPER
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 1.5A
- Terminal Position :
- Single
- Continuous Collector Current :
- 1.5A
- Max Breakdown Voltage :
- 80V
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e2
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Radiation Hardening :
- No
- Pin Count :
- 3
- Published :
- 2013
- hFE Min :
- 120
- Max Power Dissipation :
- 2W
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- 2SCR554
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 300MHz
- Max Frequency :
- 300MHz
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 25mA, 500mA
- Datasheets
- 2SCR554PT100

NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SCR554PT100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 3V.When VCE saturation is 300mV @ 25mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1.5A for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
2SCR554PT100 Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 300mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
2SCR554PT100 Applications
There are a lot of ROHM Semiconductor
2SCR554PT100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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