2SCR372P5T100Q

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Mfr.Part #
2SCR372P5T100Q
Manufacturer
ROHM Semiconductor
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN 120V 0.7A MPT3
Stock
1,566
In Stock :
1,566

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Terminations :
3
JESD-30 Code :
R-PSSO-F3
Terminal Finish :
Tin (Sn)
Max Breakdown Voltage :
120V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 50mA, 500mA
Number of Elements :
1
Max Collector Current :
700mA
Polarity/Channel Type :
NPN
Case Connection :
COLLECTOR
Transistor Type :
NPN
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Collector Emitter Voltage (VCEO) :
300mV
Max Power Dissipation :
500mW
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
AMPLIFIER
Terminal Form :
Flat
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Single
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Current - Collector Cutoff (Max) :
1μA ICBO
Collector Emitter Breakdown Voltage :
120V
Reach Compliance Code :
not_compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 100mA 5V
Mount :
Surface Mount
Power - Max :
500mW
Package / Case :
TO-243AA
Factory Lead Time :
13 Weeks
ECCN Code :
EAR99
Operating Temperature :
150°C TJ
Frequency - Transition :
220MHz
Transition Frequency :
220MHz
Configuration :
Single
Datasheets
2SCR372P5T100Q
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SCR372P5T100Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Package / Case:TO-243AA, Operating Temperature:150°C TJ, 2SCR372P5T100Q pinout, 2SCR372P5T100Q datasheet PDF, 2SCR372P5T100Q amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SCR372P5T100Q ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor 2SCR372P5T100Q


NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount

2SCR372P5T100Q Overview


In this device, the DC current gain is 120 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 50mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 220MHz.Input voltage breakdown is available at 120V volts.Single BJT transistor is possible for the collector current to fall as low as 700mA volts at Single BJT transistors maximum.

2SCR372P5T100Q Features


the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 300mV @ 50mA, 500mA
a transition frequency of 220MHz


2SCR372P5T100Q Applications


There are a lot of ROHM Semiconductor
2SCR372P5T100Q applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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