2SCR293PT100
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- Mfr.Part #
- 2SCR293PT100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A MPT3
- Stock
- 45,210
- In Stock ：
- 45,210
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- hFE Min :
- 270
- Package / Case :
- TO-243AA
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 320MHz
- Terminal Form :
- Flat
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 120mV
- Published :
- 2013
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 30V
- Element Configuration :
- Single
- Max Collector Current :
- 1A
- Max Power Dissipation :
- 2W
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 320MHz
- Current - Collector (Ic) (Max) :
- 1A
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Datasheets
- 2SCR293PT100
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SCR293PT100 Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 120mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 25mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 320MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
2SCR293PT100 Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 320MHz
2SCR293PT100 Applications
There are a lot of ROHM Semiconductor
2SCR293PT100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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