2SCR346PT100Q
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- Mfr.Part #
- 2SCR346PT100Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.1A MPT3
- Stock
- 16,458
- In Stock ：
- 16,458
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 300mV
- Package / Case :
- TO-243AA
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 13 Weeks
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 500mW
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 400V
- Power - Max :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 2mA, 20mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 10mA 10V
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 400V
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SCR346PT100Q
NPN 150°C TJ 10μA ICBO TO-243AA Tape & Reel (TR) Surface Mount
2SCR346PT100Q Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 82 @ 10mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 2mA, 20mA.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 100mA volts.
2SCR346PT100Q Features
the DC current gain for this device is 82 @ 10mA 10V
the vce saturation(Max) is 300mV @ 2mA, 20mA
2SCR346PT100Q Applications
There are a lot of ROHM Semiconductor
2SCR346PT100Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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