2SCR552P5T100
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- Mfr.Part #
- 2SCR552P5T100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A MPT3
- Stock
- 4,087
- In Stock ：
- 4,087
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 1A
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 500mW
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-243AA
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 400mV
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Transition Frequency :
- 280MHz
- Published :
- 2016
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSSO-F3
- Power - Max :
- 500mW
- Terminal Position :
- Single
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Collector Current :
- 3A
- Max Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Frequency - Transition :
- 280MHz
- Transistor Type :
- NPN
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 13 Weeks
- Transistor Application :
- SWITCHING
- Datasheets
- 2SCR552P5T100
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SCR552P5T100 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 50mA, 1A.The part has a transition frequency of 280MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2SCR552P5T100 Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
a transition frequency of 280MHz
2SCR552P5T100 Applications
There are a lot of ROHM Semiconductor
2SCR552P5T100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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