2SCR544P5T100
- Mfr.Part #
- 2SCR544P5T100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 2.5A MPT3
- Stock
- 8,339
- In Stock :
- 8,339
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 500mW
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 80V
- Transition Frequency :
- 280MHz
- Max Collector Current :
- 2.5A
- Frequency - Transition :
- 280MHz
- Collector Emitter Voltage (VCEO) :
- 300mV
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Configuration :
- Single
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 80V
- Polarity/Channel Type :
- NPN
- JESD-30 Code :
- R-PSSO-F3
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Type :
- NPN
- Power - Max :
- 500mW
- Package / Case :
- TO-243AA
- Factory Lead Time :
- 13 Weeks
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Terminal Form :
- Flat
- Datasheets
- 2SCR544P5T100
2SCR544P5T100 Documents

NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SCR544P5T100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 3V.When VCE saturation is 300mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 280MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 2.5A volts can be achieved.
2SCR544P5T100 Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 300mV @ 50mA, 1A
a transition frequency of 280MHz
2SCR544P5T100 Applications
There are a lot of ROHM Semiconductor
2SCR544P5T100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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