2SCR542F3TR

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Mfr.Part #
2SCR542F3TR
Manufacturer
ROHM Semiconductor
Package / Case
3-UDFN Exposed Pad
Datasheet
Download
Description
TRANS NPN 30V 3A HUML2020L3
Stock
1,367
In Stock :
1,367

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
3A
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Package / Case :
3-UDFN Exposed Pad
Transistor Application :
AMPLIFIER
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 2V
Transistor Type :
NPN
Factory Lead Time :
20 Weeks
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Surface Mount
Configuration :
Single
Surface Mount :
yes
Voltage - Collector Emitter Breakdown (Max) :
30V
JESD-30 Code :
S-PDSO-N3
Polarity/Channel Type :
NPN
Frequency - Transition :
250MHz
Power - Max :
1W
Case Connection :
COLLECTOR
Vce Saturation (Max) @ Ib, Ic :
200mV @ 50mA, 1A
Terminal Position :
Dual
Reach Compliance Code :
not_compliant
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Form :
NO LEAD
Transition Frequency :
250MHz
Number of Terminations :
3
Datasheets
2SCR542F3TR
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SCR542F3TR from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:3-UDFN Exposed Pad, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, 2SCR542F3TR pinout, 2SCR542F3TR datasheet PDF, 2SCR542F3TR amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SCR542F3TR ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor 2SCR542F3TR


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-UDFN Exposed Pad Tape & Reel (TR) Surface Mount

2SCR542F3TR Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 50mA, 1A.A transition frequency of 250MHz is present in the part.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.

2SCR542F3TR Features


the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 200mV @ 50mA, 1A
a transition frequency of 250MHz


2SCR542F3TR Applications


There are a lot of ROHM Semiconductor
2SCR542F3TR applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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