2SCR533PT100
- Mfr.Part #
- 2SCR533PT100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A MPT3
- Stock
- 3,996
- In Stock :
- 3,996
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 3A
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- 2SCR533
- Radiation Hardening :
- No
- Max Power Dissipation :
- 2W
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Terminal Form :
- Flat
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 50mA 3V
- Published :
- 2009
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Contact Plating :
- Copper, Tin
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- TIN COPPER
- Transistor Element Material :
- SILICON
- hFE Min :
- 180
- Max Frequency :
- 320MHz
- Max Breakdown Voltage :
- 50V
- Collector Base Voltage (VCBO) :
- 50V
- Number of Elements :
- 1
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 2W
- Package / Case :
- TO-243AA
- Transition Frequency :
- 320MHz
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Mount :
- Surface Mount
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 50V
- Continuous Collector Current :
- 3A
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 1A
- Time@Peak Reflow Temperature-Max (s) :
- 10
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- JESD-609 Code :
- e2
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SCR533PT100

NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SCR533PT100 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 50mA 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 50mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 320MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 3A volts at its maximum.
2SCR533PT100 Features
the DC current gain for this device is 180 @ 50mA 3V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 320MHz
2SCR533PT100 Applications
There are a lot of ROHM Semiconductor
2SCR533PT100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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