2SCR523MT2L
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- Mfr.Part #
- 2SCR523MT2L
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A VMT3
- Stock
- 56,000
- In Stock ：
- 56,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 150mW
- Transition Frequency :
- 350MHz
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Collector Emitter Breakdown Voltage :
- 50V
- JESD-609 Code :
- e2
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Factory Lead Time :
- 13 Weeks
- Package / Case :
- SOT-723
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Flat
- HTS Code :
- 8541.21.00.75
- Max Breakdown Voltage :
- 50V
- Published :
- 2010
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 150mW
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 350MHz
- Max Collector Current :
- 100mA
- Number of Pins :
- 3
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 100mV
- hFE Min :
- 120
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Datasheets
- 2SCR523MT2L
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SCR523MT2L Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 100mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 50mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 350MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 100mA volts.
2SCR523MT2L Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 350MHz
2SCR523MT2L Applications
There are a lot of ROHM Semiconductor
2SCR523MT2L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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