2SCR522UBTL
- Mfr.Part #
- 2SCR522UBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-85
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.2A UMT3F
- Stock
- 30,000
- In Stock :
- 30,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 13 Weeks
- Collector Emitter Breakdown Voltage :
- 20V
- Collector Emitter Voltage (VCEO) :
- 20V
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 300mV
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 120
- Terminal Form :
- Flat
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Max Power Dissipation :
- 200mW
- JESD-609 Code :
- e1
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 20V
- Max Collector Current :
- 200mA
- Gain Bandwidth Product :
- 400MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Package / Case :
- SC-85
- Continuous Collector Current :
- 200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 2V
- Published :
- 2010
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 400MHz
- Datasheets
- 2SCR522UBTL

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-85 Tape & Reel (TR) Surface Mount
2SCR522UBTL Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 400MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
2SCR522UBTL Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 400MHz
2SCR522UBTL Applications
There are a lot of ROHM Semiconductor
2SCR522UBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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