2SCR522UBTL
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- Mfr.Part #
- 2SCR522UBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-85
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.2A UMT3F
- Stock
- 30,000
- In Stock ：
- 30,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 20V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 200mA
- Transistor Type :
- NPN
- Package / Case :
- SC-85
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 20V
- Polarity/Channel Type :
- NPN
- hFE Min :
- 120
- Configuration :
- Single
- JESD-609 Code :
- e1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 2V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 13 Weeks
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- 300mV
- Published :
- 2010
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 400MHz
- Radiation Hardening :
- No
- Max Power Dissipation :
- 200mW
- Transition Frequency :
- 400MHz
- Continuous Collector Current :
- 200mA
- Collector Emitter Breakdown Voltage :
- 20V
- Terminal Form :
- Flat
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Datasheets
- 2SCR522UBTL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-85 Tape & Reel (TR) Surface Mount
2SCR522UBTL Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 400MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
2SCR522UBTL Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 400MHz
2SCR522UBTL Applications
There are a lot of ROHM Semiconductor
2SCR522UBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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