2SCR514P5T100
- Mfr.Part #
- 2SCR514P5T100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.7A MPT3
- Stock
- 15,385
- In Stock :
- 15,385
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 80V
- Power - Max :
- 500mW
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 300mV
- Terminal Position :
- Single
- Max Power Dissipation :
- 500mW
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 15mA, 300mA
- Max Collector Current :
- 700mA
- Transition Frequency :
- 320MHz
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Reach Compliance Code :
- not_compliant
- Published :
- 2016
- Factory Lead Time :
- 13 Weeks
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Terminal Form :
- Flat
- Frequency - Transition :
- 320MHz
- Package / Case :
- TO-243AA
- JESD-30 Code :
- R-PSSO-F3
- Datasheets
- 2SCR514P5T100

NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SCR514P5T100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 3V.When VCE saturation is 300mV @ 15mA, 300mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 320MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 700mA volts can be achieved.
2SCR514P5T100 Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 300mV @ 15mA, 300mA
a transition frequency of 320MHz
2SCR514P5T100 Applications
There are a lot of ROHM Semiconductor
2SCR514P5T100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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