2PB1219AS,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

170 @ 150mA 10V

Mounting Type :

Surface Mount

VCEsat-Max :

0.6 V

JESD-609 Code :

e3

Package / Case :

SC-70, SOT-323

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Base Part Number :

2PB1219

Published :

2009

Number of Elements :

1

Number of Pins :

3

Current - Collector Cutoff (Max) :

100nA ICBO

Gain Bandwidth Product :

140MHz

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

600mV @ 30mA, 300mA

Operating Temperature :

150°C TJ

Contact Plating :

Tin

Terminal Position :

Dual

Mount :

Surface Mount

Collector-Base Capacitance-Max :

15pF

Series :

Automotive, AEC-Q101

Current - Collector (Ic) (Max) :

500mA

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

60V

Transition Frequency :

140MHz

Transistor Type :

PNP

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

200mW

Transistor Application :

SWITCHING

HTS Code :

8541.21.00.75

Max Collector Current :

500mA

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

3

Emitter Base Voltage (VEBO) :

5V

Polarity/Channel Type :

PNP

Transistor Element Material :

SILICON

Number of Terminations :

3