2PB1219AS,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

50V

Contact Plating :

Tin

Pin Count :

3

Series :

Automotive, AEC-Q101

Transition Frequency :

140MHz

Mount :

Surface Mount

Transistor Element Material :

SILICON

Max Power Dissipation :

200mW

Max Collector Current :

500mA

Collector Emitter Breakdown Voltage :

50V

Package / Case :

SC-70, SOT-323

JESD-609 Code :

e3

Polarity/Channel Type :

PNP

Number of Elements :

1

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

60V

Emitter Base Voltage (VEBO) :

5V

HTS Code :

8541.21.00.75

Number of Terminations :

3

Radiation Hardening :

No

Terminal Form :

Gull wing

Collector-Base Capacitance-Max :

15pF

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Transistor Type :

PNP

Base Part Number :

2PB1219

Terminal Position :

Dual

Gain Bandwidth Product :

140MHz

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

600mV @ 30mA, 300mA

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Published :

2009

Operating Temperature :

150°C TJ

Current - Collector (Ic) (Max) :

500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

170 @ 150mA 10V

VCEsat-Max :

0.6 V

Factory Lead Time :

4 Weeks

Number of Pins :

3