2PB1219AS,115
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- Mfr.Part #
- 2PB1219AS,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.5A SOT323
- Stock
- 2,990
- In Stock ：
- 2,990
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 500mA
- Max Breakdown Voltage :
- 50V
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Published :
- 2009
- RoHS Status :
- ROHS3 Compliant
- Max Operating Temperature :
- 150°C
- Collector Emitter Voltage (VCEO) :
- 50V
- Element Configuration :
- Single
- Base Part Number :
- 2PB1219
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 200mW
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 150mA 10V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 500mA
- Frequency :
- 140MHz
- Package / Case :
- SC-70, SOT-323
- Gain Bandwidth Product :
- 140MHz
- Collector Base Voltage (VCBO) :
- 60V
- Number of Elements :
- 1
- Polarity :
- PNP
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 200mW
- Collector Emitter Breakdown Voltage :
- 50V
- Supplier Device Package :
- SC-70
- Min Operating Temperature :
- -65°C
- Series :
- Automotive, AEC-Q101
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 200mW
- Frequency - Transition :
- 140MHz
- Datasheets
- 2PB1219AS,115
PNP 150°C TJ 100nA ICBO 1 Elements SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PB1219AS,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 170 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 30mA, 300mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 50V volts.SC-70 is the supplier device package for this product.This device displays a 50V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 500mA volts.
2PB1219AS,115 Features
the DC current gain for this device is 170 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the supplier device package of SC-70
2PB1219AS,115 Applications
There are a lot of Nexperia USA Inc.
2PB1219AS,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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