2PB1219AQ,115

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Mfr.Part #
2PB1219AQ,115
Manufacturer
NXP Semiconductors
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
NOW NEXPERIA 2PB1219AQ - SMALL S
Stock
27,437
In Stock :
27,437

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation :
200mW
Max Power Dissipation :
200mW
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Emitter Voltage (VCEO) :
50V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency :
100MHz
Package / Case :
SC-70, SOT-323
Emitter Base Voltage (VEBO) :
5V
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Series :
Automotive, AEC-Q101
Contact Plating :
Tin
Gain Bandwidth Product :
100MHz
Collector Emitter Breakdown Voltage :
50V
Number of Terminations :
3
Max Collector Current :
500mA
Factory Lead Time :
4 Weeks
Published :
2009
Radiation Hardening :
No
Base Part Number :
2PB1219
Lead Free :
Lead Free
VCEsat-Max :
0.6 V
Transistor Type :
PNP
Transistor Element Material :
SILICON
Pin Count :
3
Number of Pins :
3
Peak Reflow Temperature (Cel) :
260
Mount :
Surface Mount
Polarity/Channel Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
600mV @ 30mA, 300mA
Time@Peak Reflow Temperature-Max (s) :
40
DC Current Gain (hFE) (Min) @ Ic, Vce :
85 @ 150mA 10V
Element Configuration :
Single
Terminal Position :
Dual
Terminal Form :
Gull wing
Transition Frequency :
100MHz
Transistor Application :
SWITCHING
Collector Base Voltage (VCBO) :
60V
ECCN Code :
EAR99
Operating Temperature :
150°C TJ
Datasheets
2PB1219AQ,115
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors 2PB1219AQ,115 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SC-70, SOT-323, Mounting Type:Surface Mount, Number of Terminations:3, Base Part Number:2PB1219, Number of Pins:3, Operating Temperature:150°C TJ, 2PB1219AQ,115 pinout, 2PB1219AQ,115 datasheet PDF, 2PB1219AQ,115 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors 2PB1219AQ,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors 2PB1219AQ,115


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount

2PB1219AQ,115 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 85 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 30mA, 300mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

2PB1219AQ,115 Features


the DC current gain for this device is 85 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


2PB1219AQ,115 Applications


There are a lot of Nexperia USA Inc.
2PB1219AQ,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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