2PB1219AR,115
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- Mfr.Part #
- 2PB1219AR,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.5A SOT323
- Stock
- 913
- In Stock ：
- 913
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Power - Max :
- 200mW
- JESD-30 Code :
- R-PDSO-G3
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- 2PB1219
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Qualification Status :
- Not Qualified
- HTS Code :
- 8541.21.00.75
- Collector Emitter Breakdown Voltage :
- 50V
- Transition Frequency :
- 120MHz
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Package / Case :
- SC-70, SOT-323
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 150mA 10V
- Number of Elements :
- 1
- Max Power Dissipation :
- 200mW
- Collector-Base Capacitance-Max :
- 15pF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 50V
- Series :
- Automotive, AEC-Q101
- Factory Lead Time :
- 4 Weeks
- VCEsat-Max :
- 0.6 V
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 60V
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 120MHz
- Pin Count :
- 3
- Datasheets
- 2PB1219AR,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PB1219AR,115 Overview
In this device, the DC current gain is 120 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
2PB1219AR,115 Features
the DC current gain for this device is 120 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz
2PB1219AR,115 Applications
There are a lot of Nexperia USA Inc.
2PB1219AR,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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