2PB1219AR,115
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- Mfr.Part #
- 2PB1219AR,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR PNP 50V 500MA SOT323
- Stock
- 913
- In Stock ：
- 913
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Mount :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Series :
- Automotive, AEC-Q101
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 150mA 10V
- Lead Free :
- Lead Free
- Collector-Base Capacitance-Max :
- 15pF
- Factory Lead Time :
- 4 Weeks
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- R-PDSO-G3
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 200mW
- Package / Case :
- SC-70, SOT-323
- HTS Code :
- 8541.21.00.75
- VCEsat-Max :
- 0.6 V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 120MHz
- Pin Count :
- 3
- Base Part Number :
- 2PB1219
- Collector Emitter Breakdown Voltage :
- 50V
- Transition Frequency :
- 120MHz
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 50V
- Published :
- 2009
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 50V
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Form :
- Gull wing
- Datasheets
- 2PB1219AR,115
2PB1219AR,115 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PB1219AR,115 Overview
In this device, the DC current gain is 120 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
2PB1219AR,115 Features
the DC current gain for this device is 120 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz
2PB1219AR,115 Applications
There are a lot of Nexperia USA Inc.
2PB1219AR,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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