2PB1219AR,115
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- Mfr.Part #
- 2PB1219AR,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR PNP 50V 500MA SOT323
- Stock
- 913
- In Stock ：
- 913
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- JESD-30 Code :
- R-PDSO-G3
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- 500mA
- VCEsat-Max :
- 0.6 V
- Series :
- Automotive, AEC-Q101
- Mounting Type :
- Surface Mount
- Power - Max :
- 200mW
- Gain Bandwidth Product :
- 120MHz
- Collector Emitter Breakdown Voltage :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Pin Count :
- 3
- Collector-Base Capacitance-Max :
- 15pF
- Max Power Dissipation :
- 200mW
- HTS Code :
- 8541.21.00.75
- Max Breakdown Voltage :
- 50V
- Factory Lead Time :
- 4 Weeks
- ECCN Code :
- EAR99
- Package / Case :
- SC-70, SOT-323
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 120MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 50V
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Number of Elements :
- 1
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 150mA 10V
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- 2PB1219
- Terminal Position :
- Dual
- Datasheets
- 2PB1219AR,115
2PB1219AR,115 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PB1219AR,115 Overview
In this device, the DC current gain is 120 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
2PB1219AR,115 Features
the DC current gain for this device is 120 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz
2PB1219AR,115 Applications
There are a lot of Nexperia USA Inc.
2PB1219AR,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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