2PB1219AR,115
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- Mfr.Part #
- 2PB1219AR,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR PNP 50V 500MA SOT323
- Stock
- 913
- In Stock ：
- 913
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Max Breakdown Voltage :
- 50V
- VCEsat-Max :
- 0.6 V
- HTS Code :
- 8541.21.00.75
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 150mA 10V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- 2PB1219
- Gain Bandwidth Product :
- 120MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- 150°C TJ
- Series :
- Automotive, AEC-Q101
- Max Collector Current :
- 500mA
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 60V
- Power - Max :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 200mW
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Polarity/Channel Type :
- PNP
- Collector-Base Capacitance-Max :
- 15pF
- Package / Case :
- SC-70, SOT-323
- Collector Emitter Breakdown Voltage :
- 50V
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2009
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- JESD-30 Code :
- R-PDSO-G3
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Transition Frequency :
- 120MHz
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Datasheets
- 2PB1219AR,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PB1219AR,115 Overview
In this device, the DC current gain is 120 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
2PB1219AR,115 Features
the DC current gain for this device is 120 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz
2PB1219AR,115 Applications
There are a lot of Nexperia USA Inc.
2PB1219AR,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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