2PB1219AR,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

60V

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

5V

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON

Terminal Position :

Dual

Number of Elements :

1

Transition Frequency :

120MHz

Collector Emitter Breakdown Voltage :

50V

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Base Part Number :

2PB1219

Element Configuration :

Single

Polarity/Channel Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 150mA 10V

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

120MHz

Max Power Dissipation :

200mW

Number of Pins :

3

VCEsat-Max :

0.6 V

Package / Case :

SC-70, SOT-323

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Mount :

Surface Mount

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Vce Saturation (Max) @ Ib, Ic :

600mV @ 30mA, 300mA

Gain Bandwidth Product :

120MHz

Pin Count :

3

Radiation Hardening :

No

ECCN Code :

EAR99

Number of Terminations :

3

Series :

Automotive, AEC-Q101

Transistor Type :

PNP

Power Dissipation :

200mW

Published :

2009

Collector Emitter Voltage (VCEO) :

50V