2PA1576R,115
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- Mfr.Part #
- 2PA1576R,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A SOT323
- Stock
- 328,496
- In Stock ：
- 328,496
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- VCEsat-Max :
- 0.5 V
- Transition Frequency :
- 100MHz
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 200mW
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 60V
- JESD-609 Code :
- e3
- Base Part Number :
- 2PA1576
- Emitter Base Voltage (VEBO) :
- 6V
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Max Power Dissipation :
- 200mW
- Max Breakdown Voltage :
- 50V
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Published :
- 2009
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Factory Lead Time :
- 4 Weeks
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- hFE Min :
- 180
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1mA 6V
- Max Collector Current :
- 150mA
- Polarity/Channel Type :
- PNP
- Package / Case :
- SC-70, SOT-323
- Collector Emitter Breakdown Voltage :
- 50V
- Series :
- Automotive, AEC-Q101
- Datasheets
- 2PA1576R,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PA1576R,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 1mA 6V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 150mA volts at its maximum.
2PA1576R,115 Features
the DC current gain for this device is 180 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2PA1576R,115 Applications
There are a lot of Nexperia USA Inc.
2PA1576R,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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