2PA1576S,115
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- Mfr.Part #
- 2PA1576S,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR PNP 50V 150MA SOT323
- Stock
- 95
- In Stock ：
- 95
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Base Part Number :
- 2PA1576
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Frequency :
- 100MHz
- Package / Case :
- SC-70, SOT-323
- Gain Bandwidth Product :
- 100MHz
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 200mW
- Published :
- 2009
- Series :
- Automotive, AEC-Q101
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector-Base Capacitance-Max :
- 3.5pF
- Max Power Dissipation :
- 200mW
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- VCEsat-Max :
- 0.5 V
- JESD-30 Code :
- R-PDSO-G3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 1mA 6V
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Number of Pins :
- 70
- Collector Emitter Breakdown Voltage :
- 50V
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- 150mA
- Factory Lead Time :
- 4 Weeks
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 50V
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2PA1576S,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PA1576S,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 1mA 6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2PA1576S,115 Features
the DC current gain for this device is 270 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2PA1576S,115 Applications
There are a lot of Nexperia USA Inc.
2PA1576S,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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