2PA1576R,115
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- Mfr.Part #
- 2PA1576R,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR PNP 50V 150MA SOT323
- Stock
- 328,496
- In Stock ：
- 328,496
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 100MHz
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 50V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SC-70, SOT-323
- Number of Pins :
- 3
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Published :
- 2009
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Base Part Number :
- 2PA1576
- Transition Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 200mW
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1mA 6V
- Max Collector Current :
- 150mA
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- Automotive, AEC-Q101
- VCEsat-Max :
- 0.5 V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 50V
- hFE Min :
- 180
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- 2PA1576R,115
2PA1576R,115 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PA1576R,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 1mA 6V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 150mA volts at its maximum.
2PA1576R,115 Features
the DC current gain for this device is 180 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2PA1576R,115 Applications
There are a lot of Nexperia USA Inc.
2PA1576R,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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