2PA1576R,115
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- Mfr.Part #
- 2PA1576R,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR PNP 50V 150MA SOT323
- Stock
- 328,496
- In Stock ：
- 328,496
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 200mW
- Series :
- Automotive, AEC-Q101
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 180
- Transition Frequency :
- 100MHz
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Power Dissipation :
- 200mW
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1mA 6V
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Breakdown Voltage :
- 50V
- Published :
- 2009
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Max Collector Current :
- 150mA
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- 2PA1576
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Pins :
- 3
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- VCEsat-Max :
- 0.5 V
- Package / Case :
- SC-70, SOT-323
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2PA1576R,115
2PA1576R,115 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PA1576R,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 1mA 6V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 150mA volts at its maximum.
2PA1576R,115 Features
the DC current gain for this device is 180 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2PA1576R,115 Applications
There are a lot of Nexperia USA Inc.
2PA1576R,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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