2PA1576R,115
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- Mfr.Part #
- 2PA1576R,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR PNP 50V 150MA SOT323
- Stock
- 328,496
- In Stock ：
- 328,496
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Max Breakdown Voltage :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Series :
- Automotive, AEC-Q101
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 180
- Number of Pins :
- 3
- Max Power Dissipation :
- 200mW
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Form :
- Gull wing
- Base Part Number :
- 2PA1576
- JESD-609 Code :
- e3
- Max Collector Current :
- 150mA
- Polarity/Channel Type :
- PNP
- Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 50V
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1mA 6V
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- VCEsat-Max :
- 0.5 V
- Operating Temperature :
- 150°C TJ
- Published :
- 2009
- Package / Case :
- SC-70, SOT-323
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 200mW
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 50V
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 100MHz
- Transistor Element Material :
- SILICON
- Datasheets
- 2PA1576R,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PA1576R,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 1mA 6V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 150mA volts at its maximum.
2PA1576R,115 Features
the DC current gain for this device is 180 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2PA1576R,115 Applications
There are a lot of Nexperia USA Inc.
2PA1576R,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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