2PA1576Q,115
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- Mfr.Part #
- 2PA1576Q,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA 2PA1576Q - SMALL SIGNAL
- Stock
- 28,819
- In Stock ：
- 28,819
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity :
- PNP
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 50V
- Power - Max :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Series :
- Automotive, AEC-Q101
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Element Configuration :
- Single
- Max Operating Temperature :
- 150°C
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 200mW
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 60V
- Contact Plating :
- Tin
- Current - Collector (Ic) (Max) :
- 150mA
- Supplier Device Package :
- SC-70
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Power Dissipation :
- 200mW
- Package / Case :
- SC-70, SOT-323
- Base Part Number :
- 2PA1576
- Frequency - Transition :
- 100MHz
- Max Collector Current :
- 150mA
- Frequency :
- 100MHz
- Published :
- 2009
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Min Operating Temperature :
- -65°C
- Datasheets
- 2PA1576Q,115
PNP 150°C TJ 100nA ICBO 1 Elements SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PA1576Q,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 6V.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.This device can take an input voltage of 50V volts before it breaks down.Supplier package SC-70 contains the product.The device has a 50V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 150mA volts can be achieved.
2PA1576Q,115 Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the supplier device package of SC-70
2PA1576Q,115 Applications
There are a lot of Nexperia USA Inc.
2PA1576Q,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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