2PA1576S,135
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- Mfr.Part #
- 2PA1576S,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- 2PA1576 - PNP TRANSISTOR IN A SO
- Stock
- 264,425
- In Stock ：
- 264,425
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 1mA 6V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Transition Frequency :
- 100MHz
- Max Collector Current :
- 150mA
- Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 200mW
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 50V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Max Power Dissipation :
- 200mW
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- VCEsat-Max :
- 0.5 V
- Collector Base Voltage (VCBO) :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Published :
- 2009
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- SC-70, SOT-323
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- Automotive, AEC-Q101
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- 2PA1576
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Datasheets
- 2PA1576S,135
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PA1576S,135 Overview
In this device, the DC current gain is 270 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 150mA volts.
2PA1576S,135 Features
the DC current gain for this device is 270 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2PA1576S,135 Applications
There are a lot of Nexperia USA Inc.
2PA1576S,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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