2PA1576S,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2009

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Base Voltage (VCBO) :

60V

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PDSO-G3

Contact Plating :

Tin

ECCN Code :

EAR99

Power Dissipation :

200mW

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Factory Lead Time :

4 Weeks

Pin Count :

3

Transistor Type :

PNP

Transition Frequency :

100MHz

Max Breakdown Voltage :

50V

Max Power Dissipation :

200mW

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 1mA 6V

RoHS Status :

ROHS3 Compliant

Collector-Base Capacitance-Max :

3.5pF

Emitter Base Voltage (VEBO) :

6V

Frequency :

100MHz

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Package / Case :

SC-70, SOT-323

Transistor Element Material :

SILICON

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Series :

Automotive, AEC-Q101

Polarity/Channel Type :

PNP

Max Collector Current :

150mA

Terminal Position :

Dual

Number of Pins :

70

Collector Emitter Voltage (VCEO) :

50V

Packaging :

Tape and Reel (TR)

VCEsat-Max :

0.5 V

Base Part Number :

2PA1576

Number of Terminations :

3

Gain Bandwidth Product :

100MHz

Lead Free :

Lead Free

Mount :

Surface Mount

Terminal Form :

Gull wing