2N7002PS,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Surface Mount :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Turn On Delay Time :

3 ns

Number of Elements :

2

Number of Terminations :

6

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Power Dissipation :

320mW

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

420mW

Power - Max :

420mW

RoHS Status :

ROHS3 Compliant

Package / Case :

6-TSSOP, SC-88, SOT-363

Fall Time (Typ) :

4 ns

Turn-Off Delay Time :

10 ns

Resistance :

1.6Ohm

Transistor Element Material :

SILICON

Rise Time :

4ns

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

0.8nC @ 4.5V

FET Type :

2 N-Channel (Dual)

Number of Pins :

6

Factory Lead Time :

4 Weeks

Packaging :

Cut Tape (CT)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Max Dual Supply Voltage :

60V

Radiation Hardening :

No

Continuous Drain Current (ID) :

320mA