2N7000-D75Z

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Base Part Number :

2N7000

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

JESD-30 Code :

O-PBCY-T3

FET Type :

N-Channel

Power Dissipation-Max :

400mW Ta

Terminal Position :

BOTTOM

DS Breakdown Voltage-Min :

60V

Published :

2011

Mounting Type :

Through Hole

Factory Lead Time :

11 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

0.2A

Drain-source On Resistance-Max :

5Ohm

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Drain to Source Voltage (Vdss) :

60V

Feedback Cap-Max (Crss) :

5 pF

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Number of Elements :

1

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Box (TB)

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Surface Mount :

No