2N7000-D75Z
- Mfr.Part #
- 2N7000-D75Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 200MA TO92-3
- Stock
- 8,095
- In Stock :
- 8,095
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- O-PBCY-T3
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Base Part Number :
- 2N7000
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 500mA, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 11 Weeks
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Box (TB)
- DS Breakdown Voltage-Min :
- 60V
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 60V
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Ta
- Vgs (Max) :
- ±20V
- Feedback Cap-Max (Crss) :
- 5 pF
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Published :
- 2011
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Surface Mount :
- No
- Power Dissipation-Max :
- 400mW Ta
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 5Ohm
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2N7000-D75Z
2N7000-D75Z Documents

N-Channel Tape & Box (TB) 5 Ω @ 500mA, 10V ±20V 50pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N7000-D75Z Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 0.2A.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
2N7000-D75Z Features
a 60V drain to source voltage (Vdss)
2N7000-D75Z Applications
There are a lot of ON Semiconductor
2N7000-D75Z applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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