2N7000BU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 1mA

Rise Time :

10ns

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Mounting Type :

Through Hole

Power Dissipation :

400mW

Lead Free :

Lead Free

Turn On Delay Time :

10 ns

Current Rating :

200mA

JESD-609 Code :

e3

Number of Pins :

3

Mount :

Through Hole

Drain to Source Breakdown Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

200mA Tc

Factory Lead Time :

11 Weeks

Continuous Drain Current (ID) :

200mA

ECCN Code :

EAR99

Published :

2013

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

5Ohm

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

0.2A

Number of Elements :

1

Contact Plating :

Copper, Silver, Tin

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Packaging :

Bulk

Threshold Voltage :

3.9V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

400mW Ta

Base Part Number :

2N7000

Fall Time (Typ) :

10 ns

Voltage - Rated DC :

60V

Turn-Off Delay Time :

10 ns

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V