2N7000BU

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Mfr.Part #
2N7000BU
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 60V 200MA TO92-3
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
3V @ 1mA
Rise Time :
10ns
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Mounting Type :
Through Hole
Power Dissipation :
400mW
Lead Free :
Lead Free
Turn On Delay Time :
10 ns
Current Rating :
200mA
JESD-609 Code :
e3
Number of Pins :
3
Mount :
Through Hole
Drain to Source Breakdown Voltage :
60V
Current - Continuous Drain (Id) @ 25°C :
200mA Tc
Factory Lead Time :
11 Weeks
Continuous Drain Current (ID) :
200mA
ECCN Code :
EAR99
Published :
2013
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Resistance :
5Ohm
Rds On (Max) @ Id, Vgs :
5 Ω @ 500mA, 10V
Element Configuration :
Single
Drain Current-Max (Abs) (ID) :
0.2A
Number of Elements :
1
Contact Plating :
Copper, Silver, Tin
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
FET Type :
N-Channel
Packaging :
Bulk
Threshold Voltage :
3.9V
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin (Sn)
REACH SVHC :
No SVHC
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
400mW Ta
Base Part Number :
2N7000
Fall Time (Typ) :
10 ns
Voltage - Rated DC :
60V
Turn-Off Delay Time :
10 ns
Gate to Source Voltage (Vgs) :
30V
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 25V
Introducing Transistors - FETs, MOSFETs - Single onsemi 2N7000BU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Base Part Number:2N7000, 2N7000BU pinout, 2N7000BU datasheet PDF, 2N7000BU amp .Beyond Transistors - FETs, MOSFETs - Single onsemi 2N7000BU ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N7000BU


N-Channel Bulk 5 Ω @ 500mA, 10V ±20V 50pF @ 25V TO-226-3, TO-92-3 (TO-226AA)

2N7000BU Description


2N7000BU belongs to the family of N-channel enhancement-mode field-effect transistors that are designed based on the proprietary, high cell density, DMOS technology provided by ON Semiconductor. Based on this technology, 2N7000BU FET is capable of minimizing on-state resistance while providing rugged, reliable, and fast switching performance. Due to its specific characteristics, it is well suited for applications requiring low voltage and low current.



2N7000BU Features


  • DMOS technology 

  • Advanced switching performance

  • High cell density design for low RDS (on)

  • High saturation current capability

  • Available in the TO-92 and SOT-23 package



2N7000BU Applications


  • Small servo motor control

  • Power MOSFET gate drivers

  • Other switching applications


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