2N7000
- Mfr.Part #
- 2N7000
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 200MA TO92-3
- Stock
- 4,793
- In Stock :
- 4,793
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Drain to Source Breakdown Voltage :
- 60V
- Resistance :
- 5Ohm
- Min Operating Temperature :
- -55°C
- Rds On Max :
- 5 Ω
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Factory Lead Time :
- 11 Weeks
- Input Capacitance :
- 40pF
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 200mA
- Length :
- 4.8mm
- Published :
- 2011
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Drain to Source Voltage (Vdss) :
- 60V
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Vgs (Max) :
- ±20V
- Contact Plating :
- Copper, Silver, Tin
- Current Rating :
- 200mA
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 400mW
- Voltage - Rated DC :
- 60V
- Threshold Voltage :
- 2.1V
- Number of Elements :
- 1
- Drain to Source Resistance :
- 1.2Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Ta
- Power Dissipation-Max :
- 400mW Ta
- Mount :
- Through Hole
- Packaging :
- Bulk
- Base Part Number :
- 2N7000
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Weight :
- 201mg
- Max Operating Temperature :
- 150°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Nominal Vgs :
- 2.1 V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Rds On (Max) @ Id, Vgs :
- 5Ohm @ 500mA, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 10 ns
- Number of Channels :
- 1
- Supplier Device Package :
- TO-92-3
- Width :
- 4.19mm
- Height :
- 5.2mm
- Datasheets
- 2N7000
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N-Channel Bulk 5Ohm @ 500mA, 10V ±20V 50pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA)
2N7000 is a well-known N-channel MOSFET in a TO-92 package. Unlike BJT transistors, which are current-controlled devices, MOSFETs are devices that are controlled by applying a voltage to their gate. One of the key features of MOSFET technology is that the transistor requires very little or no input current to control the load, making MOSFETs ideal for use as amplifiers. The 2N7000 also has all these features, so it can be used in many general-purpose switching applications. It offers good performance when used as an amplifier, so you can use it for audio and other signal amplification purposes.
2N7000 Features
High cell density
High saturation current
Drain-to-source voltage of 60 V
Operating temperature of -55 °C to 150 °C
Rugged, reliable, and fast switching performance
2N7000 Applications
IC output
Audio preamplifier
Audio amplification
Microcontroller output
Various signal amplification
Switch or control loads under 200mA
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