2N5179 PBFREE

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - RF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Bulk

Transition Frequency :

900MHz

Collector-Base Capacitance-Max :

1pF

Transistor Type :

NPN

JESD-30 Code :

O-MBCY-W4

Gain :

15dB

Voltage - Collector Emitter Breakdown (Max) :

12V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Power Dissipation-Max (Abs) :

0.3W

Frequency - Transition :

2GHz

VCEsat-Max :

0.4 V

Power - Max :

200mW

Transistor Element Material :

SILICON

Operating Temperature :

-65°C~200°C TJ

Surface Mount :

No

Noise Figure (dB Typ @ f) :

4.5dB @ 200MHz

JESD-609 Code :

e3

Terminal Form :

Wire

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 3mA 1V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Polarity/Channel Type :

NPN

Number of Terminations :

4

Mounting Type :

Through Hole

Package / Case :

TO-206AF, TO-72-4 Metal Can

Factory Lead Time :

24 Weeks

Terminal Position :

BOTTOM

Current - Collector (Ic) (Max) :

50mA

Configuration :

Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Application :

AMPLIFIER