2N5109

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Qualification Status :

Not Qualified

Pbfree Code :

No

HTS Code :

8541.29.00.75

RoHS Status :

RoHS Compliant

Continuous Collector Current :

400mA

Power - Output :

1W

Pin Count :

3

Terminal Form :

Wire

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

20V

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

20V

Min Operating Temperature :

-65°C

Max Collector Current :

400mA

Power Dissipation-Max :

1W

Frequency - Transition :

1.2GHz

Number of Elements :

1

Terminal Finish :

Tin/Lead (Sn/Pb)

Factory Lead Time :

8 Weeks

Highest Frequency Band :

VERY HIGH FREQUENCY B

Mount :

Through Hole

Lead Free :

Lead Free

Published :

2011

Emitter Base Voltage (VEBO) :

3V

Transistor Application :

AMPLIFIER

Collector Emitter Saturation Voltage :

500mV

JESD-30 Code :

O-MBCY-W3

Package / Case :

TO-39

Collector-Base Capacitance-Max :

3.5pF

Collector Base Voltage (VCBO) :

40V

hFE Min :

70

JESD-609 Code :

e0

Max Operating Temperature :

150°C

Gain :

11 dB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Terminal Position :

BOTTOM

Transition Frequency :

1200MHz

Polarity :

NPN

Gain Bandwidth Product :

1.2 GHz