2N5109

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation-Max :

1W

Gain Bandwidth Product :

1.2 GHz

Mount :

Through Hole

Max Collector Current :

400mA

Polarity :

NPN

Power - Output :

1W

Terminal Position :

BOTTOM

Transistor Application :

AMPLIFIER

Number of Terminations :

3

Frequency - Transition :

1.2GHz

Terminal Finish :

Tin/Lead (Sn/Pb)

HTS Code :

8541.29.00.75

Highest Frequency Band :

VERY HIGH FREQUENCY B

Pin Count :

3

Gain :

11 dB

Collector Base Voltage (VCBO) :

40V

Element Configuration :

Single

Min Operating Temperature :

-65°C

Collector Emitter Saturation Voltage :

500mV

Collector-Base Capacitance-Max :

3.5pF

Transition Frequency :

1200MHz

ECCN Code :

EAR99

Continuous Collector Current :

400mA

Max Operating Temperature :

150°C

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-39

JESD-30 Code :

O-MBCY-W3

Published :

2011

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

20V

Lead Free :

Lead Free

Terminal Form :

Wire

Collector Emitter Breakdown Voltage :

20V

JESD-609 Code :

e0

hFE Min :

70

Pbfree Code :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Emitter Base Voltage (VEBO) :

3V

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified