2N5109

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Voltage (VCEO) :

20V

Transition Frequency :

1200MHz

Collector Emitter Saturation Voltage :

500mV

Max Collector Current :

400mA

Lead Free :

Lead Free

Transistor Application :

AMPLIFIER

Emitter Base Voltage (VEBO) :

3V

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

20V

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

hFE Min :

70

Continuous Collector Current :

400mA

Element Configuration :

Single

Package / Case :

TO-39

Frequency - Transition :

1.2GHz

Collector-Base Capacitance-Max :

3.5pF

Power - Output :

1W

JESD-30 Code :

O-MBCY-W3

Terminal Form :

Wire

Published :

2011

Power Dissipation-Max :

1W

HTS Code :

8541.29.00.75

Factory Lead Time :

8 Weeks

RoHS Status :

RoHS Compliant

Pbfree Code :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Highest Frequency Band :

VERY HIGH FREQUENCY B

Gain Bandwidth Product :

1.2 GHz

Collector Base Voltage (VCBO) :

40V

Terminal Position :

BOTTOM

Min Operating Temperature :

-65°C

Gain :

11 dB

Max Operating Temperature :

150°C

Number of Elements :

1

JESD-609 Code :

e0

Mount :

Through Hole

Polarity :

NPN