2N4427

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Saturation Voltage :

500mV

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Packaging :

Bulk

Terminal Finish :

Tin/Lead (Sn/Pb)

Collector-Base Capacitance-Max :

4pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

20V

Terminal Form :

Wire

Gain :

10dB

Published :

2001

Factory Lead Time :

8 Weeks

Collector Emitter Voltage (VCEO) :

20V

hFE Min :

10

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 100mA 5V

Terminal Position :

BOTTOM

Continuous Collector Current :

400mA

Pbfree Code :

No

Emitter Base Voltage (VEBO) :

2V

Transition Frequency :

500MHz

Collector Base Voltage (VCBO) :

40V

Gain Bandwidth Product :

500MHz

Mounting Type :

Through Hole

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Mount :

Through Hole

JESD-30 Code :

O-MBCY-W3

Operating Temperature :

-65°C~200°C TJ

Max Power Dissipation :

1W

Transistor Application :

AMPLIFIER

Qualification Status :

Not Qualified

Element Configuration :

Single

Highest Frequency Band :

VERY HIGH FREQUENCY B

Transistor Type :

NPN

JESD-609 Code :

e0

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Number of Elements :

1

HTS Code :

8541.29.00.75

Output Power :

1W

Number of Terminations :

3

Polarity/Channel Type :

NPN

Max Collector Current :

400mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-205AD, TO-39-3 Metal Can