2N4427

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

20V

Highest Frequency Band :

VERY HIGH FREQUENCY B

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

hFE Min :

10

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

400mA

RoHS Status :

ROHS3 Compliant

Published :

2001

Mounting Type :

Through Hole

Transistor Type :

NPN

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

2V

Packaging :

Bulk

Collector Emitter Saturation Voltage :

500mV

Collector Emitter Breakdown Voltage :

20V

Pbfree Code :

No

Collector-Base Capacitance-Max :

4pF

Max Power Dissipation :

1W

Qualification Status :

Not Qualified

Gain Bandwidth Product :

500MHz

Collector Base Voltage (VCBO) :

40V

Mount :

Through Hole

JESD-609 Code :

e0

Terminal Finish :

Tin/Lead (Sn/Pb)

Output Power :

1W

Number of Elements :

1

Factory Lead Time :

8 Weeks

Polarity/Channel Type :

NPN

Element Configuration :

Single

HTS Code :

8541.29.00.75

Gain :

10dB

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 100mA 5V

Terminal Form :

Wire

JESD-30 Code :

O-MBCY-W3

Reach Compliance Code :

not_compliant

Operating Temperature :

-65°C~200°C TJ

Package / Case :

TO-205AD, TO-39-3 Metal Can

Continuous Collector Current :

400mA

Transition Frequency :

500MHz