2N4427

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-65°C~200°C TJ

Package / Case :

TO-205AD, TO-39-3 Metal Can

Terminal Form :

Wire

Collector Emitter Saturation Voltage :

500mV

Continuous Collector Current :

400mA

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Gain Bandwidth Product :

500MHz

Max Power Dissipation :

1W

Max Collector Current :

400mA

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Gain :

10dB

hFE Min :

10

HTS Code :

8541.29.00.75

Highest Frequency Band :

VERY HIGH FREQUENCY B

Terminal Position :

BOTTOM

Reach Compliance Code :

not_compliant

Emitter Base Voltage (VEBO) :

2V

Element Configuration :

Single

Pbfree Code :

No

Output Power :

1W

JESD-30 Code :

O-MBCY-W3

Packaging :

Bulk

Lead Free :

Lead Free

Transition Frequency :

500MHz

Collector Base Voltage (VCBO) :

40V

Mounting Type :

Through Hole

Published :

2001

Collector-Base Capacitance-Max :

4pF

Polarity/Channel Type :

NPN

Transistor Application :

AMPLIFIER

Transistor Type :

NPN

Factory Lead Time :

8 Weeks

Collector Emitter Breakdown Voltage :

20V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 100mA 5V

Collector Emitter Voltage (VCEO) :

20V

JESD-609 Code :

e0