2N2857UB

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Packaging :

Bulk

Gain :

21dB

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Max Collector Current :

40mA

Configuration :

Single

Emitter Base Voltage (VEBO) :

3V

Transistor Type :

NPN

Number of Terminations :

3

Pin Count :

3

Collector Emitter Voltage (VCEO) :

15V

Terminal Finish :

TIN LEAD

Pbfree Code :

No

Package / Case :

3-SMD, No Lead

Factory Lead Time :

22 Weeks

Power Dissipation :

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3mA 1V

Published :

2007

JESD-609 Code :

e0

Number of Elements :

1

Collector Base Voltage (VCBO) :

30V

Transistor Element Material :

SILICON

Number of Pins :

3

Mounting Type :

Surface Mount

Radiation Hardening :

No

Operating Temperature :

-65°C~200°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

200mW

Mount :

Surface Mount

Polarity/Channel Type :

NPN

Terminal Position :

Dual

Noise Figure (dB Typ @ f) :

4.5dB @ 450MHz