2N2857UB

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

15V

Pin Count :

3

Terminal Finish :

TIN LEAD

Operating Temperature :

-65°C~200°C TJ

Package / Case :

3-SMD, No Lead

Factory Lead Time :

22 Weeks

Collector Base Voltage (VCBO) :

30V

Emitter Base Voltage (VEBO) :

3V

Mount :

Surface Mount

Published :

2007

Power Dissipation :

200mW

JESD-609 Code :

e0

Gain :

21dB

Number of Terminations :

3

Max Power Dissipation :

200mW

Max Collector Current :

40mA

ECCN Code :

EAR99

Radiation Hardening :

No

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Number of Pins :

3

Terminal Position :

Dual

Polarity/Channel Type :

NPN

Packaging :

Bulk

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3mA 1V

Mounting Type :

Surface Mount

Configuration :

Single

Noise Figure (dB Typ @ f) :

4.5dB @ 450MHz

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Pbfree Code :

No