2N2857UB

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Published :

2007

Gain :

21dB

Max Collector Current :

40mA

Power Dissipation :

200mW

Mount :

Surface Mount

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Emitter Base Voltage (VEBO) :

3V

Mounting Type :

Surface Mount

Pin Count :

3

Radiation Hardening :

No

Max Power Dissipation :

200mW

JESD-609 Code :

e0

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

15V

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

30V

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3mA 1V

Operating Temperature :

-65°C~200°C TJ

Terminal Finish :

TIN LEAD

Terminal Position :

Dual

RoHS Status :

Non-RoHS Compliant

Noise Figure (dB Typ @ f) :

4.5dB @ 450MHz

Number of Pins :

3

Package / Case :

3-SMD, No Lead

Configuration :

Single

Factory Lead Time :

22 Weeks

Packaging :

Bulk

Number of Terminations :

3