2N2857

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Packaging :

Bulk

Mount :

Through Hole

Max Operating Temperature :

150°C

Published :

2016

Transition Frequency :

1000MHz

Gain :

--

Terminal Position :

BOTTOM

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3mA, 1V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Collector Current :

40mA

Noise Figure (dB Typ @ f) :

4.5dB @ 450MHz

ECCN Code :

EAR99

Operating Temperature :

-65°C ~ 200°C (TJ)

Transistor Type :

NPN

Emitter Base Voltage (VEBO) :

2.5V

HTS Code :

8541.21.00.75

Series :

--

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

RoHS Status :

RoHS Compliant

Transistor Application :

AMPLIFIER

Number of Terminations :

4

Collector-Base Capacitance-Max :

1pF

Collector Base Voltage (VCBO) :

30V

JESD-30 Code :

O-MBCY-W4

Power Dissipation-Max :

200mW

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

15V

Supplier Device Package :

TO-72

Pbfree Code :

No

Package / Case :

TO-72

Polarity :

NPN

Gain Bandwidth Product :

1.9 GHz

hFE Min :

30

Current - Collector (Ic) (Max) :

40mA

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

JESD-609 Code :

e0

DC Current Gain-Min (hFE) :

30

Element Configuration :

Single

Terminal Finish :

Tin/Lead (Sn/Pb)

Factory Lead Time :

12 Weeks

Collector Emitter Breakdown Voltage :

15V

Frequency - Transition :

1.9GHz

Voltage - Collector Emitter Breakdown (Max) :

15V

Power - Max :

200mW

Min Operating Temperature :

-65°C

Terminal Form :

Wire