2N2857
- Mfr.Part #
- 2N2857
- Manufacturer
- Microsemi
- Package / Case
- TO-72
- Datasheet
- Download
- Description
- RF TRANS NPN 15V 500MHZ TO72
- Stock
- 39,294
- In Stock :
- 39,294
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Terminal Form :
- Wire
- Voltage - Collector Emitter Breakdown (Max) :
- 15V
- Max Collector Current :
- 40mA
- Factory Lead Time :
- 12 Weeks
- Mounting Type :
- Through Hole
- HTS Code :
- 8541.21.00.75
- Collector-Base Capacitance-Max :
- 1pF
- Frequency - Transition :
- 1.9GHz
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Collector Base Voltage (VCBO) :
- 30V
- JESD-30 Code :
- O-MBCY-W4
- hFE Min :
- 30
- Min Operating Temperature :
- -65°C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 2.5V
- Series :
- --
- RoHS Status :
- RoHS Compliant
- Published :
- 2016
- Packaging :
- Bulk
- Transistor Application :
- AMPLIFIER
- Current - Collector (Ic) (Max) :
- 40mA
- Package / Case :
- TO-72
- Power - Max :
- 200mW
- Pbfree Code :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Gain :
- --
- Polarity :
- NPN
- DC Current Gain-Min (hFE) :
- 30
- Power Dissipation-Max :
- 200mW
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 15V
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Noise Figure (dB Typ @ f) :
- 4.5dB @ 450MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 3mA, 1V
- Highest Frequency Band :
- ULTRA HIGH FREQUENCY B
- Number of Terminations :
- 4
- Transition Frequency :
- 1000MHz
- JESD-609 Code :
- e0
- Supplier Device Package :
- TO-72
- Gain Bandwidth Product :
- 1.9 GHz
- Max Operating Temperature :
- 150°C
- Datasheets
- 2N2857

2N2857 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Central Semiconductor stock available at
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