2DB1424R-13
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- Mfr.Part #
- 2DB1424R-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 3A SOT89-3
- Stock
- 46,661
- In Stock ：
- 46,661
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Height :
- 1.5mm
- Frequency :
- 220MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1W
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Published :
- 2008
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 2A
- Length :
- 4.5mm
- Base Part Number :
- 2DB1424
- Terminal Form :
- Flat
- Factory Lead Time :
- 19 Weeks
- Number of Terminations :
- 3
- Max Collector Current :
- 3A
- Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 20V
- Transition Frequency :
- 220MHz
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 20V
- Weight :
- 51.993025mg
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Width :
- 2.5mm
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PSSO-F3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 220MHz
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 20V
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 2V
- Package / Case :
- TO-243AA
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- 2DB1424R-13
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2DB1424R-13 Overview
In this device, the DC current gain is 180 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 220MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
2DB1424R-13 Features
the DC current gain for this device is 180 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 220MHz
2DB1424R-13 Applications
There are a lot of Diodes Incorporated
2DB1424R-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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