2DA1774QLP-7B
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- Mfr.Part #
- 2DA1774QLP-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UFDFN
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.1A 3DFN
- Stock
- 10,012
- In Stock ：
- 10,012
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- -100mA
- Max Power Dissipation :
- 250mW
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Package / Case :
- 3-UFDFN
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 13 Weeks
- Pin Count :
- 3
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Saturation Voltage :
- -200mV
- Base Part Number :
- 2DA1774
- Frequency :
- 100MHz
- Case Connection :
- COLLECTOR
- Additional Feature :
- High Reliability
- Transition Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 250mW
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Published :
- 2011
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 40V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 50V
- Datasheets
- 2DA1774QLP-7B
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-UFDFN Tape & Reel (TR) Surface Mount
2DA1774QLP-7B Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -200mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -100mA is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 40V volts.The maximum collector current is 100mA volts.
2DA1774QLP-7B Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
2DA1774QLP-7B Applications
There are a lot of Diodes Incorporated
2DA1774QLP-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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