2DA1213Y-13
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- Mfr.Part #
- 2DA1213Y-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A SOT89-3
- Stock
- 16,433
- In Stock ：
- 16,433
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2010
- Gain Bandwidth Product :
- 160MHz
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.5mm
- Mount :
- Surface Mount
- Terminal Form :
- Flat
- Power Dissipation :
- 1W
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 51.993025mg
- Max Collector Current :
- 2A
- Collector Emitter Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Matte Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Base Part Number :
- 2DA1213
- Frequency :
- 160MHz
- Max Power Dissipation :
- 1W
- Polarity/Channel Type :
- PNP
- Length :
- 4.5mm
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -500mV
- Transition Frequency :
- 160MHz
- Width :
- 2.5mm
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 1A
- Package / Case :
- TO-243AA
- Lead Free :
- Lead Free
- Factory Lead Time :
- 19 Weeks
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 50V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 4
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Transistor Type :
- PNP
- JESD-30 Code :
- R-PSSO-F3
- Collector Base Voltage (VCBO) :
- 50V
- Max Breakdown Voltage :
- 50V
- Datasheets
- 2DA1213Y-13
2DA1213Y-13 Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2DA1213Y-13 Overview
In this device, the DC current gain is 120 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2DA1213Y-13 Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 160MHz
2DA1213Y-13 Applications
There are a lot of Diodes Incorporated
2DA1213Y-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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