2DA1213Y-13
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- Mfr.Part #
- 2DA1213Y-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A SOT89-3
- Stock
- 16,433
- In Stock ：
- 16,433
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -500mV
- Gain Bandwidth Product :
- 160MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Power Dissipation :
- 1W
- Mount :
- Surface Mount
- Factory Lead Time :
- 19 Weeks
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Flat
- Published :
- 2010
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- 2DA1213
- Length :
- 4.5mm
- Package / Case :
- TO-243AA
- Height :
- 1.5mm
- Case Connection :
- COLLECTOR
- Width :
- 2.5mm
- Max Power Dissipation :
- 1W
- Collector Emitter Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 1A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Number of Pins :
- 4
- Weight :
- 51.993025mg
- JESD-609 Code :
- e3
- Max Collector Current :
- 2A
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Frequency :
- 160MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- R-PSSO-F3
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 160MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Datasheets
- 2DA1213Y-13
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2DA1213Y-13 Overview
In this device, the DC current gain is 120 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2DA1213Y-13 Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 160MHz
2DA1213Y-13 Applications
There are a lot of Diodes Incorporated
2DA1213Y-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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