2DA1201YQTC
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- Mfr.Part #
- 2DA1201YQTC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.8A SOT89-3
- Stock
- 4,000
- In Stock ：
- 4,000
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 120V
- Collector Emitter Saturation Voltage :
- -1V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 5V
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 160MHz
- Max Collector Current :
- 800mA
- Packaging :
- Cut Tape (CT)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 160MHz
- Factory Lead Time :
- 17 Weeks
- Additional Feature :
- High Reliability
- Mount :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Collector Emitter Voltage (VCEO) :
- 120V
- Power Dissipation :
- 1.5W
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Type :
- PNP
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 120V
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Weight :
- 51.993025mg
- Published :
- 2012
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Max Power Dissipation :
- 1.5W
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Matte Tin (Sn)
- Lead Free :
- Lead Free
- Number of Pins :
- 4
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Element Configuration :
- Single
- Continuous Collector Current :
- -800mA
- Current - Collector Cutoff (Max) :
- 100nA
- JESD-30 Code :
- R-PSSO-F3
- Package / Case :
- TO-243AA
- Frequency :
- 160MHz
- Collector Emitter Breakdown Voltage :
- 120V
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Datasheets
- 2DA1201YQTC
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Cut Tape (CT) Surface Mount
2DA1201YQTC Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of -1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -800mA.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 160MHz in the part.Single BJT transistor can be broken down at a voltage of 120V volts.When collector current reaches its maximum, it can reach 800mA volts.
2DA1201YQTC Features
the DC current gain for this device is 120 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
2DA1201YQTC Applications
There are a lot of Diodes Incorporated
2DA1201YQTC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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