2DA1201YQTC
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- Mfr.Part #
- 2DA1201YQTC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.8A SOT89-3
- Stock
- 4,000
- In Stock ：
- 4,000
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 160MHz
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Max Collector Current :
- 800mA
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Additional Feature :
- High Reliability
- Max Breakdown Voltage :
- 120V
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-243AA
- Weight :
- 51.993025mg
- Collector Emitter Saturation Voltage :
- -1V
- Transistor Type :
- PNP
- Frequency :
- 160MHz
- Current - Collector Cutoff (Max) :
- 100nA
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 120V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2012
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 5V
- JESD-30 Code :
- R-PSSO-F3
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 4
- Gain Bandwidth Product :
- 160MHz
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 7V
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101
- Continuous Collector Current :
- -800mA
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 120V
- Pbfree Code :
- yes
- Max Power Dissipation :
- 1.5W
- Power Dissipation :
- 1.5W
- Collector Base Voltage (VCBO) :
- 120V
- Factory Lead Time :
- 17 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Packaging :
- Cut Tape (CT)
- Terminal Form :
- Flat
- Datasheets
- 2DA1201YQTC
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Cut Tape (CT) Surface Mount
2DA1201YQTC Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of -1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -800mA.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 160MHz in the part.Single BJT transistor can be broken down at a voltage of 120V volts.When collector current reaches its maximum, it can reach 800mA volts.
2DA1201YQTC Features
the DC current gain for this device is 120 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
2DA1201YQTC Applications
There are a lot of Diodes Incorporated
2DA1201YQTC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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